Non-Graded Base Si/Ge Heterojunction Transistor

Sam Mil'shtein, Harsha Purushothama Dombala, Oliver A Kia, Mukhammaddin Zinaddinov


Innovation of Heterojunction Bipolar Transistor (HBT) technology is a major game changer in wireless communication, power amplifiers and other major fields of electronics. HBTs play a vital role in extending the advantages of silicon bipolar transistors to significantly higher levels. Research on HBT is focused on reducing cost and improving reliability.  These transistors have a wide range of applications namely, digital-to-analog converters, logarithmic amplifiers, RF chip sets for CDMA wireless communication systems, and power amplifiers for cellular communications. Our study focuses on utilizing the high mobility of pure Ge instead of often-used graded Ge base. Non-grtaded Ge base enhanses carrier transport which in turn increases the gain and cut-off frequency of the HBT. We have developed a high frequency, high current gain, high power gain and less noisy heterojunction bipolar transistor operating above 100GHz frequency. Lattice mismatch at emitter and collector junctions is compensated by inserting SiGe buffer layers. ATLAS TCAD - SILVACO software is used for modelling of this novel device.


Si/Ge, heterostructured transistor, non-graded Ge base, lattice matching

Full Text:


References 3ACF526CFFBCD6 6/pub_hbt_paper.pdf

Sam Mil'shtein, Samed Halilov, John Palma, "SiGe HBT with Quantum Well Base", Intern. Confer, Phys. Semicond.-2014, p. 15, Aug. 2014

Adel S. Sedra et al., “Microelectronic Circuits – Theory and Applications”, Oxford University Press, P.159 to P.298. pdf?&cc=US&lc=eng

Donald A. Neamen, “Semiconductor Physics and Devices- Basic Principles”, Mcgraw Hill Companies Inc, P.491 to P.558

R. Szweda, “Silicon Germanium Materials and Devices - A Market and Technology Overview to 2006”, Elsevier Science

D. C. Ahlgren, M. Gilbert, D. Greenberg, S. J. Jeng, J. Malinowski, D. Nguyen-Ngoc, K. Schonenberg, K. Stein, R. Groves, K. Walter, G. Hueckel, D. Colavito, G. Freeman, D. Sunderland, D. L. Harame, and B. Meyersori, IBM Microelectronics Division, Hopewell Junction, New York. *IBM Research Division, Yorktown Heights, New York. “Manufacturability Demonstration of an Integrated SiGe HBT Technology for the Analog and Wireless Marketplace”, Electron Devices Meeting, 1996. IEDM '96., International

Harame. K. Schonenberg, M. Gilbert, et al., IBM Res. Div., Yorktown Hts., NY, USA, *IBM Microelectronics Division, Ifopewell Junct., NY, EE Dept Auburn IJniv., Auburn, AL, Analog Devices, Greensboro, NC, Analog Devices, Wilmington, MA, “A 200 mm SiGe-HBT technology for wireless and mixed-signal applications”, 1994 IEEE International Electron Devices Meeting.

Jing Zhang, Yonghui Yang, Guangbing Chen, Yuxin Wang, Dongbing Hu, Kaizhou Tan, Wei Cui, Zhaohuan Tang, National Laboratory of Analog Integrated Circuits, Chongqing, China, “A Ge-Graded SiGe HBT with β > 100 and fT = 67 GHz”, World Journal of Engineering and Technology, 2015.

J.V. Grahn*, H. Fosshaug, M. Jargelius, P. JoÈ nsson, M. Linder, B.G. Malm, B. Mohadjeri, J. Pejnefors, H.H. Radamson, M. SandeÂn, Y.-B. Wang, G.Landgren, M. Ostling, “A low-complexity 62-GHz fT SiGe heterojunction bipolar transistor process using dierential epitaxy and in situ phosphorus-doped poly-Si emitte emitter at very low thermal budget”, Solid-State Electronics 44 (2000) 549-554.



  • There are currently no refbacks.