Discussion on Fermi Level of Intrinsic Semiconductor and Pn Junction of Non-Intrinsic Semiconductor

Shaoshao Xu

Abstract


Substances are usually classified according to their electrical conductivity as conductors, insulators, and semiconductors. The specific positions of Fermi energy levels of intrinsic semiconductors and two kinds of extrinsic semiconductors are analyzed. By using carrier concentration, the Boltzmann constant, effective density of states and other physical quantities as well as the related formula, it is concluded that the Fermi energy levels of intrinsic semiconductors lies in the middle of the forbidden band, The Fermi level of n-type semiconductor is higher than the intrinsic Fermi level, while p-type semiconductor is lower than the intrinsic Fermi level. Based on the knowledge of forward bias pn junction and reverse bias pn junction, the basic framework of semiconductor theme is summarized. At the same time, I pay attention to the latest research results of semiconductor, and the future research direction of the semiconductor field has been grasped roughly.


Keywords


Intrinsic Semiconductor; Fermi Level; Carrier; Extrinsic Semiconductor; PN Junction

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DOI: https://doi.org/10.18686/esta.v9i1.210

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