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Determination of Optimum Zn content in Cd1-xZnxS Nanoparticles



CdZnS quantum dots (QDs) QDs containing concentrations of 0.25, 0.5, 1, 3 and 5% Zn were synthesized at room temperature by chemical precipitation method and then incident photons to current efficiency (IPCE) measurements were performed to determine optimum Zn concentration in CdZnS QDs. Moreover, Zn2SnO4, a ternary compound semiconductor, was used instead of TiO2 as counter electrode for the first time. As a last part of the study, the structural and optical properties of CdZnS QDs containing optimum Zn content were investigated, respectively. Consequently, it appears that CdZnS QDs have a higher efficiency than CdS and that Zn doping plays an important role in this increase.


Characterization, doping, photovoltaic, quantum dots, zinc

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